Active and preferred
RoHS Compliant
Lead-free

FM16W08-SGTR

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

FM16W08-SGTR
FM16W08-SGTR
Data Sheet

Product details

  • Density
    64 kBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 5.5 V
  • Operating Voltage range
    2.7 V to 5.5 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    70 ns
Recommended
OPN
FM16W08-SGTR
Product Status active and preferred
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The FM16W08-SGTR is a 64-Kbit (8 K × 8) parallel ferroelectric RAM (F-RAM) providing nonvolatile storage with 100 trillion read/write cycles and 151-year data retention at 65°C. It operates from 2.7 V to 5.5 V across –40°C to +85°C, with 70-ns access and 130-ns cycle times. Compatible with standard SRAM and EEPROM pinouts, it is ideal for industrial control, data logging, and metering systems requiring frequent, rapid writes. Supplied in a 28-pin SOIC package, RoHS compliant.

Features

  • 64-Kbit (8 K × 8) F-RAM memory
  • 100 trillion (1e14) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ fast write operation
  • 70-ns access time, 130-ns cycle time
  • Wide voltage: VDD = 2.7 V to 5.5 V
  • Low active current: 12 mA max
  • Standby current: 20 μA typical
  • SRAM and EEPROM compatible pinout
  • Industry-standard 8 K × 8 interface
  • Resistant to negative voltage undershoots
  • Advanced ferroelectric process

Benefits

  • Practically unlimited write endurance
  • Data retained for decades without power
  • Fast writes improve system speed
  • Drop-in replacement for SRAM/EEPROM
  • No battery or refresh needed
  • Simplifies system design
  • Low power extends battery life
  • Reliable in harsh environments
  • No data loss from power interruptions
  • Easy integration into existing designs
  • Reduces maintenance and downtime
  • High reliability for mission-critical use

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }