FM16W08-SGTR
Active and preferred
RoHS Compliant
Lead-free

FM16W08-SGTR

Data Sheet
package
ea.
in stock

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FM16W08-SGTR
FM16W08-SGTR
ea.
Data Sheet

Product details

  • Density
    64 kBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 5.5 V
  • Operating Voltage range
    2.7 V to 5.5 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    70 ns
Recommended
OPN
FM16W08-SGTR
Product Status active and preferred
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM16W08-SGTR is a 64-Kbit (8 K × 8) parallel ferroelectric RAM (F-RAM) providing nonvolatile storage with 100 trillion read/write cycles and 151-year data retention at 65°C. It operates from 2.7 V to 5.5 V across –40°C to +85°C, with 70-ns access and 130-ns cycle times. Compatible with standard SRAM and EEPROM pinouts, it is ideal for industrial control, data logging, and metering systems requiring frequent, rapid writes. Supplied in a 28-pin SOIC package, RoHS compliant.

Features

  • 64-Kbit (8 K × 8) F-RAM memory
  • 100 trillion (1e14) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ fast write operation
  • 70-ns access time, 130-ns cycle time
  • Wide voltage: VDD = 2.7 V to 5.5 V
  • Low active current: 12 mA max
  • Standby current: 20 μA typical
  • SRAM and EEPROM compatible pinout
  • Industry-standard 8 K × 8 interface
  • Resistant to negative voltage undershoots
  • Advanced ferroelectric process

Benefits

  • Practically unlimited write endurance
  • Data retained for decades without power
  • Fast writes improve system speed
  • Drop-in replacement for SRAM/EEPROM
  • No battery or refresh needed
  • Simplifies system design
  • Low power extends battery life
  • Reliable in harsh environments
  • No data loss from power interruptions
  • Easy integration into existing designs
  • Reduces maintenance and downtime
  • High reliability for mission-critical use

Applications

Documents

Design resources

Partner solutions

Developer community

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