Active and preferred
RoHS Compliant

CY14B116N-BA25XI

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY14B116N-BA25XI
CY14B116N-BA25XI
Data Sheet

Product details

  • Density
    16 MBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    1Mb x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2031
  • Qualification
    Industrial
  • Speed
    25 ns
Recommended
OPN
CY14B116N-BA25XI
Product Status active and preferred
Infineon Package
PG-TFBGA-60
Package Name FBGA-60 (002-00193)
Packing Size 112
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TFBGA-60
Package Name FBGA-60 (002-00193)
Packing Size 112
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY14B116N-BA25XI is a 16-Mbit nvSRAM organized as 1024K × 16, combining fast SRAM with QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V over –40°C to 85°C and offers 25-ns access. Data is automatically STORED on power-down and RECALLED on power-up, with software- or pin-initiated STORE/RECALL. Sleep mode current is 10 µA max. It is supplied in a 60-ball FBGA package.

Features

  • 16-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down via VCAP
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cell tech
  • 1M STORE cycles to QuantumTrap
  • 20-year data retention
  • Infinite SRAM R/W/RECALL cycles
  • Sleep mode current 10 µA max
  • Power-up RECALL duration 30 ms
  • STORE cycle duration 8 ms
  • VCAP capacitor 19.8 µF to 82 µF

Benefits

  • Retains data through power loss
  • No battery needed for retention
  • Flexible save/restore control
  • Fast restart after power returns
  • High endurance for frequent saves
  • No wear-out from SRAM writes
  • Long service life for stored data
  • Sleep cuts idle power drain
  • 10 µA sleep suits low-power systems
  • Predictable shutdown save time
  • Simple hold-up cap eases design
  • Blocks access during STORE/RECALL

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }