Background for document preview
Background for thumbnail

Next generation 1700 V IGBT and emitter controlled diode with .XT technology

Increasing chip performance with respect to static and dynamic losses is an essential prerequisite to accommodate the continuous demand for higher power densities of inverters. Here, we present the superior performance characteristics of the new 1700 V IGBT and diode generations of Infineon Technologies. At 30% higher current for the same module footprint, these 5th generation devices reach the same on-state voltages and switching losses per Ampere as the existing 1700 V IGBT and diode generation. In the new 1700 V power module generation, we implement the XT technology, which provides the established module lifetime at the increased power density and higher junction temperature (Tvj.op = 175°C) or, alternatively, can be employed to enable a strong enhancement of the lifetime.

• 921.01 KB
• Aug 25, 2014