2000 V Silicon Carbide MOSFETs
2000 V CoolSiC™ MOSFETs in different variants with with on-resistance ratings from 12 mΩ up to 2.6 mΩ
Infineon 2000 V CoolSiC™ Silicon Carbide MOSFET discretes and modules were especially developed for applications such as EV-Charging, Photovolatic, Energy Storage and more. The products have been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions.
2000 V CoolSiC™ MOSFET
Infineon's 2000V CoolSiC™ modules and discretes are a family of silicon carbide (SiC) power semiconductor devices designed to provide high power density, efficiency, and reliability in a wide range of applications. They come with CoolSiC™ technology, which enables the development of high-voltage power devices with improved performance, and reduced losses.
The 2000V CoolSiC™ modules and discretes are designed to operate at high voltages, making them suitable for applications such as industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure. These devices offer a range of benefits, including high switching frequencies, low switching losses, and high thermal conductivity, making them ideal for high-power applications.
One of the key advantages of Infineon's 2000 V CoolSiC™ modules and discretes is their ability to operate at high temperatures, making them suitable for use in harsh environments.
Discrete CoolSiC™ MOSFET
CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort.
CoolSiC™ MOSFET Modules
CoolSiC™ MOSFET modules allow high operating temperatures and switching frequencies, thereby improving overall system efficiency. These modules are available in various configurations, including 3-level, half-bridge, fourpack, sixpack, and booster topologies and come in 1200 V, 2000 V and 3300 V.
Additional options like pre-applied Thermal Interface Material (TIM) can be ordered as well. Infineon's CoolSiC™ MOSFET modules are based on trench technology and feature superior gate-oxide reliability , best-on-class switching and conduction losses.
CoolSiC™ MOSFETs Generation 2
Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.
Key features
- On-resistance ratings up to 2.6 mΩ
- Perfect fit for 1500 VDC-link
- Higher power density
- Reduced system complexity
- Low switching & conduction losses
- Wide gate source voltage range
- Maximum Tvj,op of 175° C
- Highest threshold voltage of Vth > 4 V
This video highlights the benefits of CoolSiC™, as seen through the eyes of our customers. Featuring testimonials from alpitronic, Tritium, Lite-On, Siemens Mobility, and Fronius, we see how SiC is driving innovation in energy generation, storage, and consumption.
This video provides valuable insights into the advantages of WBG (SiC & GaN) technology and its potential impact on the future of renewable energy, especially solar and energy storage systems.
CoolSiC™ MOSFET Webinars
This training will introduce you to the gate oxide reliability of CoolSiC™ MOSFETs and how Infineon's design enables the effective screening of defects by opting for a trench MOSFET.
Additionally, you will understand how this decision has allowed Infineon to achieve high reliability that surpasses that of mature silicon technology without negatively impacting key performance parameters.
The switching performance in particular is influenced by the chip's inherent properties, the device's operating conditions and the external circuitry. Optimizing operating conditions and circuitry can significantly improve the device performance in an application.
Circuit designers benefit from SPICE compact models that they can use in computer simulation to understand, troubleshoot and optimize the static and dynamic device behavior of applications through virtual prototyping.
This training explains the characteristics and use cases of simulation models offered by Infineon for CoolSiC™ MOSFETs, what to use them for and how to use them effectively.
This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC™ MOSFET Microlearnings
Discover the benefits and challenges associated with connecting SiC power MOSFETs in parallel
By the end of this training, you will be familiar with CoolSiC™ MOSFET 1200 V M1H technology for Easy modules and with Infineon ever-expanding Easy module portfolio in the area of wide band gap material and know about the key features and benefits that are coming along with our latest M1H 1200 V series.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications
Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in AC-DC applications!
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