FZ800R12KE3
Overview
1200 V, 800 A single switch IGBT module
62 mm 1200 V, 800 A single switch IGBT module with TRENCHSTOP™ IGBT3 and Emitter Controlled 3 diode.
Summary of Features
- Low switching losses
- Unbeatable robustness
- VCEsat with positive temperature coefficient
- Low VCEsat
- 4 kV AC 1 min insulation
- Package with CTI > 400
- High creepage and clearance distances
- High power density
- Isolated base plate
- Standard housing
Benefits
- Flexibility
- Optimal electrical performance
- Highest reliability
Potential Applications
Please select a matching HV Gate Driver IC from our EiceDRIVER™ Portfolio.
With Infineon EiceDRIVER™ Enhanced and Compact Driver ICs as well as EiceDRIVER™ Safe Driver Boards we provide a broad spectrum of solutions for reliable and efficient controls of IGBT Modules.
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