FZ800R12KE3

Overview

1200 V, 800 A single switch IGBT module

62 mm 1200 V, 800 A single switch IGBT module with TRENCHSTOP™ IGBT3 and Emitter Controlled 3 diode.

Summary of Features:

  • Low switching losses
  • Unbeatable robustness
  • VCEsat with positive temperature coefficient
  • Low VCEsat
  • 4 kV AC 1 min insulation
  • Package with CTI > 400
  • High creepage and clearance distances
  • High power density
  • Isolated base plate
  • Standard housing

Benefits:

  • Flexibility
  • Optimal electrical performance
  • Highest reliability

Target Applications:

Please select a matching HV Gate Driver IC from our EiceDRIVER™ Portfolio.
With Infineon EiceDRIVER™ Enhanced and Compact Driver ICs as well as EiceDRIVER™ Safe Driver Boards we provide a broad spectrum of solutions for reliable and efficient controls of IGBT Modules.

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