FF50R12RT4 1200 V, 50 A dual IGBT module
Overview
34 mm 1200 V, 50 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and Emitter Controlled 4 Diode.
Summary of Features
- Extended Operation Temperature T vj op
- Low Switching Losses
- Low VCEsat
- Tvj op = 150°C
- VCEsat with positive Temperature Coefficient
- Isolated Base Plate
- Standard Housing
Benefits
- Flexibility
- Optimal electrical performance
- Highest reliability
Diagrams
Support