FF50R12RT4

Overview

1200 V, 50 A dual IGBT module

34 mm 1200 V, 50 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and Emitter Controlled 4 Diode.

Summary of Features

  • Extended Operation Temperature T vj op
  • Low Switching Losses
  • Low VCEsat
  • Tvj op = 150°C
  • VCEsat with positive Temperature Coefficient
  • Isolated Base Plate
  • Standard Housing

Benefits

  • Flexibility
  • Optimal electrical performance
  • Highest reliability

Potential Applications

Please also find our EiceDRIVER™ HV Gate Driver Family

For example the 1EDI60I12AF EiceDRIVER™ compact is a fast and powerful Gate Driver suitable for your IGBT Module applications (Evalboard available). 

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