FF50R12RT4
Overview
1200 V, 50 A dual IGBT module
34 mm 1200 V, 50 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and Emitter Controlled 4 Diode.
Summary of Features
- Extended Operation Temperature T vj op
- Low Switching Losses
- Low VCEsat
- Tvj op = 150°C
- VCEsat with positive Temperature Coefficient
- Isolated Base Plate
- Standard Housing
Benefits
- Flexibility
- Optimal electrical performance
- Highest reliability
Potential Applications
Please also find our EiceDRIVER™ HV Gate Driver Family
For example the 1EDI60I12AF EiceDRIVER™ compact is a fast and powerful Gate Driver suitable for your IGBT Module applications (Evalboard available).
Diagrams
Simulation
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