FF100R12RT4

Overview

1200 V dual IGBT module

34 mm 1200 V, 100 A dual switch IGBT module with fast TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode.

Summary of Features:

  • Extended operation temperature Tvj op
  • Low switching losses
  • Low VCEsat
  • Tvj op = 150°C
  • VCEsat with positive temperature coefficient
  • Isolated base plate
  • Standard housing

Benefits:

  • Flexibility
  • Optimal electrical performance
  • Highest reliability

Target Applications:

Please also find our EiceDRIVER™ HV Gate Driver Family

For example the 1EDI60I12AF EiceDRIVER™ compact is a fast and powerful Gate Driver suitable for your IGBT Module applications (Evalboard available). 

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