IGBT Discrete market leadership through groundbreaking innovation and application focus
Striving for the highest standards in performance and quality, Infineon offers a comprehensive discrete IGBT portfolio that is second to none. New products are application-specific developed to achieve the highest value.
From 600V up to 1600V, we offer a wide range of IGBT voltage classes to meet different voltage requirements in each application. Our discrete IGBT package portfolio contains SMD (Surface Mount Device) packages, for example, D²PAK, DPAK, SOT-223, and through-hole packages, for example, TO220, TO220FP, TO247, TO247-4, TO247PLUS, TO-247PLUS-4 and TO247 Advanced Isolation packages.
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In this training, we will show you step by step where and how to access Infineon SPICE and PLECS simulation models for its discrete IGBTs and CoolSiC™ products.
We will also show how to use these models and tools in an offline and online simulation.
Are you familiar with the structure of Infineon discrete insulated-gate bipolar transistor datasheets?
And did you know that a new format was recently released?
This is what we will cover!
This training introduces RC-H6 650 V Reverse Conducting IGBT technology for half-bridge induction cooking.
Thanks to its superior controllability, humidity robustness and short-circuit ruggedness, Infineon’s IGBT7 T7 delivers the highest electrical performance among short-circuit devices.
Curious to know more? Watch this training.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.