Silicon on Insulator (SOI) Gate Driver ICs
SOI Level Shift High Voltage Gate Driver ICs for IGBTs and MOSFETs
Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique, measurable and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.
Now including the new 2ED218x - high current 650 V, 2.5 A, half-bridge SOI gate driver family, and new 2ED210x - low current 650 V, 0.7 A, half-bridge SOI gate driver family. Both product families include two package options of DSO-8 and DSO-14.
Operation robustness of negative transient voltage at the VS pin (-VS)
Today's high-power switching inverters and drives carry a large load current. The voltage swing on VS pin does not stop at the level of the negative DC bus. It swings below the level of the negative DC bus due to the parasitic inductances in the power circuit and from the die bonding to the PCB tracks. This undershoot voltage is called "negative transient voltage".
EiceDRIVER™ high-voltage level-shift gate driver IC products using Infineon SOI technology have the best-in-the-industry operational robustness. In Below the safe operating line of a SOI gate driver (6ED2230S12T - coming soon) is shown at VBS = 15 V for pulse widths up to 1000 ns. In the green area, the products do not show unwanted functional anomalies or permanent damage to the IC.