Overview

The single-channel isolated EiceDRIVER™ GaN gate driver IC family for high-voltage gallium nitride switches was developed to drive Infineon’s CoolGaN™ 600 V e-mode HEMTs, allowing for higher system efficiency and power density, associated with improved robustness and reduced costs. Infineon’s gallium nitride CoolGaN™ 600 V e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ GaN 1EDF5673K, 1EDF5673F, and 1EDS5663H gate driver ICs.

Key features
  • Low-ohmic outputs
  • Single-channel galvanic isolation
  • Minimum output pulse width 18 ns
  • Propagation delay acc. -6 ns/+7 ns
  • Single output supply voltage
  • CMTI >200 V/ns
Applications
Multicopters and drones

Products

About

Robust and efficient single-channel isolated EiceDRIVER™ GaN IC

CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, 1EDF5673K, 1EDF5673F, and 1EDS5663H. They ensure robust and highly efficient operation of the high-voltage gallium-nitride switch, and at the same time concurrently minimize R&D efforts and shorten time-to-market. This will be enabled through configurable and constant GaN switching slew rates over a wide range of switching frequencies and duty cycles. 

Key advantages of designing with GaN high-side gate drivers

Key advantages when designing with Infineon’s tailor-made EiceDRIVER™ GaN gate driver ICs are the fast turn-on and turn-off switch slew rates in source and sink driving currents which enable fast turn-on/turn-off GaN switch slew rates. In addition, the EiceDRIVER™ GaN gate driver ICs provide negative VGS voltage, resulting in safe off-states during switching transients and even for the first pulse or after burst mode operation. Configurable and constant GaN switching slew rates over a wide range of switching frequencies and duty cycles result in robust and efficient GaN operation and fast time-to-market. The integrated galvanic isolation enables the high-voltage GaN to be driven in hard-switching half-bridge applications, such as the totem pole PFC topology. It is also mandatory when the PWM signals need to cross the safe isolation barrier, such as in the secondary-side controlled resonant LLC topology. 

GaN EiceDRIVER™ product family

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed. The widely used RC-coupled gate driver fulfills these requirements, however, it suffers from a duty-cycle dependence of switching dynamics and the lack of negative gate drive in specific situations. Infineon's GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable a zero “off" level to eliminate any duty-cycle dependence. In addition, the differential topology can provide a negative gate drive without the need for a negative supply voltage. Infineon´s EiceDRIVER™ GaN gate driver ICs are available in 13-pin LGA and 16-pin P-DSO packages for functional isolation as well as in 16-pin P-DSO for reinforced isolation.

Robust and efficient single-channel isolated EiceDRIVER™ GaN IC

CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, 1EDF5673K, 1EDF5673F, and 1EDS5663H. They ensure robust and highly efficient operation of the high-voltage gallium-nitride switch, and at the same time concurrently minimize R&D efforts and shorten time-to-market. This will be enabled through configurable and constant GaN switching slew rates over a wide range of switching frequencies and duty cycles. 

Key advantages of designing with GaN high-side gate drivers

Key advantages when designing with Infineon’s tailor-made EiceDRIVER™ GaN gate driver ICs are the fast turn-on and turn-off switch slew rates in source and sink driving currents which enable fast turn-on/turn-off GaN switch slew rates. In addition, the EiceDRIVER™ GaN gate driver ICs provide negative VGS voltage, resulting in safe off-states during switching transients and even for the first pulse or after burst mode operation. Configurable and constant GaN switching slew rates over a wide range of switching frequencies and duty cycles result in robust and efficient GaN operation and fast time-to-market. The integrated galvanic isolation enables the high-voltage GaN to be driven in hard-switching half-bridge applications, such as the totem pole PFC topology. It is also mandatory when the PWM signals need to cross the safe isolation barrier, such as in the secondary-side controlled resonant LLC topology. 

GaN EiceDRIVER™ product family

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed. The widely used RC-coupled gate driver fulfills these requirements, however, it suffers from a duty-cycle dependence of switching dynamics and the lack of negative gate drive in specific situations. Infineon's GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable a zero “off" level to eliminate any duty-cycle dependence. In addition, the differential topology can provide a negative gate drive without the need for a negative supply voltage. Infineon´s EiceDRIVER™ GaN gate driver ICs are available in 13-pin LGA and 16-pin P-DSO packages for functional isolation as well as in 16-pin P-DSO for reinforced isolation.

Documents

Documents

News & highlights

Introducing gallium nitride CoolGaN™ e-mode HEMTs

Introducing gallium nitride CoolGaN™ e-mode HEMTs

Driver ICs for GaN HEMTs

GaN devices have an ultra low turn-on threshold and to properly drive them it is important that there is a negative gate voltage provided when the HEMT is intended to turn-off. In that way, it is fast turned off. Secondly, this gate drivers can hold the gate voltage firmly at zero when the HEMT is intendeded to turned-off. No spurios turn-on of the HEMTs.

Driving Infineon's CoolGaN™ GIT HEMTs with EiceDRIVER™ gate driver ICs

A quick look at Infineon’s evaluation board, EVAL_2EDB_HB_GAN. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors. A simple GaN half-bridge with dedicated GaN driver ICs contributes to the design of this board and help deliver an easy setup and use environment for the end user.

Get the know-how of driving gallium nitride CoolGaN™ e-mode HEMTs from an expert!

Hubert Baierl, Senior Product Marketing, introduces Infineon's dedicated single-channel isolated GaN EiceDRIVER™ family.