IRHNS67160SCS

Data Sheet

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IRHNS67160SCS
IRHNS67160SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    56 A
  • ID (@25°C) max
    56 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SupIR-SMD
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    170 nC
  • QPL Part Number
    2N7579U2A
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    10 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS min
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNS67160 N-channel MOSFET is a single, rad hard device with an electrical performance of up to 100krad(Si) TID. With a rating of 100V and 56A, it features low RDS(on) and low gate charge, reducing power losses in switching applications. The IR HiRel R6 technology provides high performance power MOSFETs for space applications.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }