IRHNS57260SESCS

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IRHNS57260SESCS
IRHNS57260SESCS

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    34 A
  • ID (@25°C) max
    53.5 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SupIR-SMD
  • Polarity
    N
  • QG
    155 nC
  • QPL Part Number
    2N7473U2A
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    38 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS min
    200 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNS57260SESCS R5 N-channel MOSFET is a rad hard device with 200V and 53A capability, ideal for space applications. It has high electrical performance up to 100krad(Si) TID, QIRL classification with low RDS(on) and low gate charge, resulting in reduced power losses. Housed in a SupIR-SMD package, this MOSFET has fast switching, voltage control, and temperature stability of electrical parameters.

Applications

Documents

Design resources

Developer community

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