Active and preferred

IRHNS57260SE

Data Sheet
package

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IRHNS57260SE
IRHNS57260SE
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    34 A
  • ID (@25°C) max
    53.5 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SupIR-SMD
  • Polarity
    N
  • QG
    155 nC
  • QPL Part Number
    2N7473U2A
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    38 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-SOG-3
Package Name SUPIR SMD
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-SOG-3
Package Name SUPIR SMD
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The IRHNS57260SE R5 N-channel MOSFET is a rad hard device with 200V and 53A capability, ideal for space applications. in a SupIR-SMD package, it has high electrical performance up to 100krad(Si) TID, with low RDS(on) and low gate charge, resulting in reduced power losses. The COTS rad hard MOSFET has fast switching, voltage control, and temperature stability of electrical parameters.

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