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IRHNA7260SESCV
Product details
-
ConfigurationDiscrete
-
Die Size6
-
ESD ClassClass 3B
-
GenerationR4
-
ID (@100°C) max27 A
-
ID (@25°C) max43 A
-
Optional TID Rating (kRad(si))100
-
PackageSMD-2
-
PolarityN
-
QG290 nC
-
QualificationCOTS
-
RDS (on) (@25°C) max70 mΩ
-
TID max100 Krad(Si)
-
VBRDSS200 V
-
VF max1.8 V
| Recommended | |
|
OPN
|
|
| Product Status | active and preferred |
| Infineon Package | |
| Package Name | SMD-2 standard |
| Packing Size | N/A |
| Packing Type | N/A |
| Moisture Level | N/A |
| Moisture Packing | N/A |
| Lead-free | No |
| Halogen Free | No |
| RoHS Compliant | No |
|
|
|
| Product Status |
Active
|
|---|---|
| Infineon Package | |
| Package Name | SMD-2 standard |
| Packing Size | 0 |
| Packing Type | |
| Moisture Level | - |
| Moisture Packing | |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
The IRHNA7260SESCV N-channel MOSFET is a single, rad hard, 200V, 27A device with electrical performance up to 100krad(Si) TID. Generation R4, it comes in a SMD-2 package and uses IR HiRel rad hard HEXFET technology, ideal for high-performance power applications in space. Low RDS(on) and gate charge make it suitable for switching applications with low power losses. Its QIRL classification ensures quality and reliability.
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