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IRHNA7260SESCV

Data Sheet
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IRHNA7260SESCV
IRHNA7260SESCV
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R4
  • ID (@100°C) max
    27 A
  • ID (@25°C) max
    43 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-2
  • Polarity
    N
  • QG
    290 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    70 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.8 V
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Product Status
Infineon Package
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Packing Size
Packing Type
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Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IRHNA7260SESCV N-channel MOSFET is a single, rad hard, 200V, 27A device with electrical performance up to 100krad(Si) TID. Generation R4, it comes in a SMD-2 package and uses IR HiRel rad hard HEXFET technology, ideal for high-performance power applications in space. Low RDS(on) and gate charge make it suitable for switching applications with low power losses. Its QIRL classification ensures quality and reliability.

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