IRFH4210D

25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Data Sheet

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IRFH4210D
IRFH4210D
Data Sheet

Product details

  • ID (@25°C) max
    266 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    PQFN 5 x 6 B
  • Polarity
    N
  • Ptot max
    125 W
  • Ptot (@ TA=25°C) max
    3.5 W
  • Qgd
    13.2 nC
  • QG (typ @4.5V)
    37 nC
  • RDS (on) (@10V) max
    1.1 mΩ
  • RDS (on) (@4.5V) max
    1.35 mΩ
  • RthJC max
    1 K/W
  • Special Features
    Schottky (includes Schottky like and FETky)
  • Tj max
    150 °C
  • VDS max
    25 V
  • VGS(th)
    1.6 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Low RDS(ON) (less than 1.10 mOhms)
  • Schottky Intrinsic Diode with Low Forward Voltage
  • Low Thermal Resistance to PCB (less than 1.0°C/W)
  • Low Profile (less than 0.9 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • RoHS Compliant, Halogen-Free
  • MSL1, Industrial Qualification
  • FastIRFET™

Applications

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Documents

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