IRF8910G

Halogen Free and Lead Free 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Data Sheet

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRF8910G
IRF8910G
Data Sheet

Product details

  • ID (@ TA=25°C) max
    10 A, 10 A
  • ID (@ TA=70°C) max
    8.3 A, 8.3 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    2.5 nC
  • QG
    7.4 nC
  • RDS (on) (@10V) max
    13.4 mΩ
  • RDS (on) (@4.5V) max
    18.3 mΩ
  • RDS (on) max
    13.4 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    20 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Low RDS(ON) at 4.5V VGS
  • Ultra-Low Gate Impedance
  • Dual N-Channel MOSFET

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }