IRF6894M

25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 33 amperes optimized with low on resistance.
Data Sheet

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IRF6894M
IRF6894M
Data Sheet

Product details

  • ID (@25°C) max
    163 A
  • Micro-stencil
    IRF66MX-25
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    DirectFET MX
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    2.1 W
  • Ptot max
    54 W
  • Qgd
    9.8 nC
  • QG (typ @4.5V)
    31 nC
  • RDS (on) (@10V) max
    1.3 mΩ
  • RDS (on) (@4.5V) max
    1.8 mΩ
  • RthJC max
    2.3 K/W
  • Special Features
    Schottky (includes Schottky like and FETky)
  • Tj max
    150 °C
  • VDS max
    25 V
  • VGS(th)
    1.6 V
  • VGS max
    16 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
  • Integrated Monolithic Sckottky Diode

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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