Active and preferred
RoHS Compliant
Lead-free

CY15B104QN-50SXAT

Data Sheet
package

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CY15B104QN-50SXAT
CY15B104QN-50SXAT
Data Sheet

Product details

  • Density
    4 MBit
  • Family
    Excelon™
  • Frequency
    50 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    1.8 V to 3.6 V
  • Operating Voltage range
    1.8 V to 3.6 V
  • Organization (X x Y)
    256Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(A)
  • Speed
    0 ns
Recommended
OPN
CY15B104QN-50SXAT
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (001-85261)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (001-85261)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15B104QN-50SXAT is a 4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) for automotive systems, offering non-volatile memory with 100 trillion read/write cycles and 151-year data retention. It operates from 1.8 V to 3.6 V across -40°C to +85°C, supports SPI up to 50 MHz, and features advanced write protection. Low-power modes include standby and deep power-down. AEC-Q100 Grade 3 compliant and available in an 8-pin SOIC package, it is suited for high-reliability automotive use.

Features

  • 4Mb ferroelectric RAM, 512K × 8 organization
  • Virtually unlimited endurance: 10¹⁴ cycles
  • 151-year data retention at 60°C
  • Instant non-volatile write, no delays
  • Up to 50 MHz SPI interface
  • Supports SPI mode 0 and 3
  • Hardware and software write protection
  • Dedicated 256-byte special sector
  • Device and unique serial number ID
  • Active current: 0.4 mA at 1 MHz, 3.7 mA at 40
  • Standby current: 2.7 µA (typ)
  • Deep Power Down: 1.1 µA (typ)

Benefits

  • Reliable for frequent data logging
  • Eliminates write delays for real-time use
  • 151-year retention ensures data safety
  • 10¹⁴ cycles outlasts EEPROM/flash
  • 50 MHz SPI enables fast data transfer
  • Flexible SPI mode for easy integration
  • Write protection prevents accidental changes
  • Special sector survives solder reflow
  • Unique ID simplifies traceability
  • Low active/standby power saves energy
  • Deep Power Down extends battery life
  • Hibernate mode minimizes power drain

Documents

Documents

Design resources

Partner solutions

Developer community

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