Infineon’s NEW radiation-hardened GaN transistor for extreme environments

Introducing the IG1NT052N10R, a cutting-edge radiation-hardened Gallium Nitride (GaN) transistor designed specifically for space applications. Our GaN device boasts industry-leading performance and reliability in the most demanding environments, like the rest of our IR HiRel family of power products. Depending on your specific application and mission requirements you can select from two screening levels, COTS (100 and 500 kRad) or JANS certified (500 kRad).

Key features

• Single event effect (SEE) hardened up to LET (GAN)¹ = 70 MeV.cm²/mg (Au ion)
• Ultra-low R_DS(on)
• Low total gate charge
• Zero reverse recovery charge
• Hermetically sealed ceramic package
• Surface mount
• Light weight
• ESD rating: Class 1C per MIL-STD-750, Method 1020

Product summary

• V_{DS max}: 100 V
• I_D: 52 A
• R_{DS(on) max}: 6.0 mΩ
• Q_{G max}: 13 nC
• Size: 7.1 mm x 5.3 mm
• REF: MIL-PRF-19500 /794

Potential applications

• Isolated DC-DC converters
• Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails
• Synchronous rectification
• Motor drives

High-performance power devices for space exploration

Our rad hard GaN transistors have undergone rigorous testing for Total Ionizing Dose (TID) and Single Event Effects (SEE), ensuring they can withstand the harsh conditions of space. The three devices offer a unique combination of low RDS(on), low gate charge, and zero reverse recovery charge, minimizing power losses in switching applications such as DC-DC converters and motor control. The transistors can withstand the extreme environment of space, and are qualified based on MIL-PRF-19500.

Enabling high-frequency operation and high-power density

Our latest GaN power devices enable the design of high-frequency power management circuits, resulting in high-power density and reduced payload mass. GaN devices can operate at higher voltages and have a wider band gap while offering enhanced thermal stability over Si. These features make our rad hard device an ideal choice for space applications where size, weight, and power (SWaP) are critical factors.