Full Bridge Drivers
Gate Driver ICs to control power devices like MOSFETs or IGBTs in full bridge configurations
Every switch needs a driver – the right driver makes a difference. Our gate driver IC solutions are the expert’s choice. We offer full bridge gate driver ICs, which have four channels in one package with two independent half bridges, with shoot through protection. The IRS2453D family has self-oscillating feature, suitable for HID lighting application. The IR2086S is a self oscillating full-bridge controller and driver IC with 50% duty cycle ideally suited for 36V-75V full-bridge DC Bus Converters.
We also offer automotive qualified full bridge gate driver ICs.
Typical full bridge driver connection diagram
Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.
Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.
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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.