Overview

Including silicon-on-insulator (SOI) and junction isolation (JI) offerings. We offer gate driver ICs tailored for low-voltage (24 V, 36 V, and 48 V) and medium-voltage (60 V, 80 V, 100 V, and 120 V) motor control applications. We provide a comprehensive portfolio of 200 V level shift gate drivers which includes three-phase, half-bridge, or high- and low- side drivers for low-voltage and medium-voltage motor control applications.

Key features
  • Low quiescent current
  • Various input options
  • Standard pin-out and packages
  • Including SOI and JI offerings
Applications
Multicopters and drones
Cordless power tools
Wireless charging
Motor Control
Domestic robots

Products

About

EiceDRIVER™ 200 V Junction-Isolated level shift gate driver ICs

The IRS200x family utilizes our advanced junction isolated high-voltage ICs technology to realize a compact, efficient, and robust monolithic construction.

The IRS2005/7/8 family consists of four devices with VCC  and VBS UVLO protection. The IRS2007 and IRS2008 include integrated dead-time and shoot-through protection. The 200 V devices feature low quiescent currents. IRS2008 also features a shutdown input pin.

The IRS2005/7/8 200 V devices are offered in eight-pin DSO-8 or 14-pin 4 x 4 mm VQFN14 packages (IRS2005M) with various logic input options and standard pin-out configurations for high design flexibility and fast time to market. All devices are MSL2 qualified.

IRS2005 replaces IRS2001;

IRS2007 can replace IRS2003;

IRS2008 can replace IRS2004.

IRS2001, IRS2003, IRS2004 are not recommended for new designs

EiceDRIVER™ 200 V Silicon on Insulator level shift gate driver ICs

The three-phase product family (6EDL04N02PR, 6ED003L02-F2) utilizes our unique SOI level shift technology to provide functional isolation with industry-leading negative VS robustness and reduced level shift losses. A solution is also available with integrated BSD to reduce BOM cost, simplify layout, and reduce PCB size. The 6EDxxxx three-phase devices are available in small footprint TSSOP-28 packages (6EDL04N02PR).

EiceDRIVER™ 160 V Silicon on Insulator level shift gate driver ICs

The 160 V SOI family includes compact 3ph, Half-bridge, and High-side and Low-side drivers with strong -VS immunity and integrated boot strap diodes for robust and low-cost designs in a variety of battery powered applications including Power Tools, Robotics, and LEVs. The 2ch parts come in a 3x3mm VSON10 package and offer various UVLOs for Vcc and Vb pins and drive currents from 1 A /2 A up to 4 A /8 A. The 3ph part, 6ED2742S01Q, supports 100% duty cycle operation by a trickle charge pump. Protection features include under voltage lockout, over current protection with configurable threshold, fault communication and automatic fault clear. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. A current sense operational amplifier (CSA) with selectable gain is integrated between the VSS and COM. The key benefits are, among other things, the fast and reliable switching, protection under abnormal operation, increased device reliability, operational headroom, low-cost bootstrap power supply, BOM savings, it is easy to use, straight-forward design, fast time to market, reduced BOM cost, smaller PCB at lower cost with simpler design, and increased negative VS robustness for increased reliability.

EiceDRIVER™ 200 V Junction-Isolated level shift gate driver ICs

The IRS200x family utilizes our advanced junction isolated high-voltage ICs technology to realize a compact, efficient, and robust monolithic construction.

The IRS2005/7/8 family consists of four devices with VCC  and VBS UVLO protection. The IRS2007 and IRS2008 include integrated dead-time and shoot-through protection. The 200 V devices feature low quiescent currents. IRS2008 also features a shutdown input pin.

The IRS2005/7/8 200 V devices are offered in eight-pin DSO-8 or 14-pin 4 x 4 mm VQFN14 packages (IRS2005M) with various logic input options and standard pin-out configurations for high design flexibility and fast time to market. All devices are MSL2 qualified.

IRS2005 replaces IRS2001;

IRS2007 can replace IRS2003;

IRS2008 can replace IRS2004.

IRS2001, IRS2003, IRS2004 are not recommended for new designs

EiceDRIVER™ 200 V Silicon on Insulator level shift gate driver ICs

The three-phase product family (6EDL04N02PR, 6ED003L02-F2) utilizes our unique SOI level shift technology to provide functional isolation with industry-leading negative VS robustness and reduced level shift losses. A solution is also available with integrated BSD to reduce BOM cost, simplify layout, and reduce PCB size. The 6EDxxxx three-phase devices are available in small footprint TSSOP-28 packages (6EDL04N02PR).

EiceDRIVER™ 160 V Silicon on Insulator level shift gate driver ICs

The 160 V SOI family includes compact 3ph, Half-bridge, and High-side and Low-side drivers with strong -VS immunity and integrated boot strap diodes for robust and low-cost designs in a variety of battery powered applications including Power Tools, Robotics, and LEVs. The 2ch parts come in a 3x3mm VSON10 package and offer various UVLOs for Vcc and Vb pins and drive currents from 1 A /2 A up to 4 A /8 A. The 3ph part, 6ED2742S01Q, supports 100% duty cycle operation by a trickle charge pump. Protection features include under voltage lockout, over current protection with configurable threshold, fault communication and automatic fault clear. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. A current sense operational amplifier (CSA) with selectable gain is integrated between the VSS and COM. The key benefits are, among other things, the fast and reliable switching, protection under abnormal operation, increased device reliability, operational headroom, low-cost bootstrap power supply, BOM savings, it is easy to use, straight-forward design, fast time to market, reduced BOM cost, smaller PCB at lower cost with simpler design, and increased negative VS robustness for increased reliability.

Documents

Documents

News & highlights

Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.