Active and preferred
RoHS Compliant
Lead-free

S27KL0642GABHM020

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S27KL0642GABHM020
S27KL0642GABHM020

Product details

  • Density
    64 MBit
  • Family
    KL-2
  • Initial Access Time
    35 ns
  • Interface Bandwidth
    400 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 200
  • Interfaces
    HYPERBUS
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Automotive
  • Technology
    HYPERRAM
OPN
S27KL0642GABHM020
Product Status active and preferred
Infineon Package
Package Name FBGA-24 (002-15550)
Packing Size 3380
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name FBGA-24 (002-15550)
Packing Size 3380
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S27KL0642GABHM020 is a 64-Mbit HyperRAM self-refresh DRAM for automotive AEC-Q100 Grade 1 (-40°C to 125°C). It uses a HyperBus interface with 8-bit DDR DQ[7:0], RWDS, CS#, and RESET#, supporting up to 200 MHz clock and 400 MBps throughput. The 3.0 V-only device operates from 2.7 V to 3.6 V and supports Hybrid Sleep, Deep Power Down, and configurable linear or wrapped burst lengths in a 24-ball 1.00 mm pitch FBGA.

Features

  • HyperBus Interface
  • 8-bit DDR data bus (DQ[7:0])
  • 200 MHz maximum clock rate
  • Up to 400 MBps throughput
  • 35 ns max initial access (tACC)
  • RWDS read strobe/write mask
  • Optional differential CK/CK#
  • Optional DCARS strobe phase shift
  • Linear or wrapped burst lengths
  • Active Clock Stop state
  • Hybrid Sleep retains data
  • Deep Power Down stops refresh

Benefits

  • Reduces pins vs parallel DRAM
  • High bandwidth for fast loads
  • 35 ns helps cut read latency
  • RWDS improves DDR timing margin
  • Diff clock helps SI and noise
  • DCARS improves read eye margin
  • Burst modes match system access
  • Clock stop lowers stall power
  • Hybrid Sleep saves power, keeps data
  • DPD minimizes power when unused
  • Works with 1.8 V or 3.0 V rails
  • 2 kV HBM ESD improves durability

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }