Active and preferred

JANSR2N7476T1

Data Sheet
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JANSR2N7476T1
JANSR2N7476T1
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    29 A
  • ID (@25°C) max
    45 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    165 C
  • QPL Part Number
    2N7476T1
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    44 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
M-TO254-3
Package Name TO-254AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
JANSR2N7476T1 N-channel MOSFET is a radiation-hardened device with a voltage rating of 200V and current handling capacity of 45A. It is a single R5 MOSFET packaged in a TO-254AA low ohmic package. With electrical performance up to 100krad(Si) TID and QPL classification, it is ideal for space applications. Its low RDS(on) and low gate charge make it suitable for switching applications, while retaining all the benefits of MOSFETs.

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