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IRHY67C30CSCS

Data Sheet
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IRHY67C30CSCS
IRHY67C30CSCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    2.1 A
  • ID (@25°C) max
    3.4 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    52 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    3000 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    600 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
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The IRHY67C30CSCS R6 N-channel MOSFET is a rad-hard device with 600V and 3.4A capabilities. Its superior power technology provides improved power density and faster switching times for high speed switching applications. With low RDS(on) and high immunity to SEE, this QIRL device is ideal for space applications. It's characterized for LET up to 90MeV·cm2/mg and electrical performance up to 100krad(Si) TID.

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