IRHMS6S7264SCS

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IRHMS6S7264SCS
IRHMS6S7264SCS

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    28.5 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • QG
    220 C
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    41 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMS6S7264SCS R6 N-channel MOSFET is a QIRL-grade, rad hard MOSFET for space applications with 200V and 45A. Its low RDS(on) and gate charge reduce power losses in switching applications like DC-DC converters and motor controllers. Retaining all advantages of MOSFETs, this device is characterized for Total Dose and Single Event Effect up to LET of 90 MeV·cm2/mg.

Applications

Documents

Design resources

Developer community

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