IRHLUBN770Z4SCS

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IRHLUBN770Z4SCS
IRHLUBN770Z4SCS

Product details

  • Configuration
    Discrete
  • Die Size
    Z
  • ESD Class
    Class 0
  • Generation
    R7
  • ID (@100°C) max
    0.5 A
  • ID (@25°C) max
    0.8 A
  • Language
    SPICE, SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    UB
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    3.6 nC
  • QPL Part Number
    2N7616UB
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    680 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS min
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V, 100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLUBN770Z4SCS is a rad hard single N-channel device with 60V and 0.8A ratings. With electrical performance up to 100krad(Si) TID and QIRL classification, this MOSFET is ideal for interfacing CMOS and TTL control circuits to power devices in radiation environments. The device maintains single event gate rupture and burnout immunity while interfacing with most logic gates, linear ICs, and micro-controllers using a 3.3-5V source.

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }