not for new design

IRHLNM7S7214

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
package

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IRHLNM7S7214
IRHLNM7S7214
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    2 A
  • ID (@25°C) max
    3.2 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • QG
    13 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    1100 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLNM7S7214 MOSFET is a single R7 N-channel device with a maximum voltage rating of 250V and a current rating of 3.2A. It is designed for space and other radiation environments, featuring rad hard construction, electrical performance up to 100krad(Si) TID. This COTS MOSFET provides single event gate rupture and burnout immunity while maintaining acceptable operating limits over full temperature and radiation.

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