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IRHF7110

Data Sheet
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IRHF7110
IRHF7110
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1A
  • Generation
    R4
  • ID (@100°C) max
    2.2 A
  • ID (@25°C) max
    3.5 A
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    TO-205AF
  • Polarity
    N
  • QG
    11 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    600 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.4 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHF7110 R4 N-channel MOSFET is a radiation-hardened device designed for space applications. With a maximum voltage rating of 100V and a current rating of 3.5A, it features low RDS(on) and low gate charge for reduced power losses in switching applications. Its electrical performance is up to 100krad(Si) TID, QIRL qualified, making it a reliable choice for space environments.

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