IRFI4019HG-117P

150V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) Lead Free and Halogen Free package
Data Sheet

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IRFI4019HG-117P
IRFI4019HG-117P
Data Sheet

Product details

  • ID (@ TA=25°C) max
    8.7 A, 8.7 A
  • ID (@ TA=70°C) max
    6.2 A, 6.2 A
  • Package
    TO-220 FullPAK
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    18 W
  • Qgd (typ)
    3.9 nC
  • QG
    13 nC
  • RDS (on) max
    95 mΩ
  • RDS (on) (@10V) max
    95 mΩ
  • RthJA max
    65 K/W
  • Tj max
    150 °C
  • VDS max
    150 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Dual N-Channel MOSFET
  • Integrated Half Bridge package
  • Optimized for Class-D Audio Amplifier Applications
  • Low Qrr for better THD and improved efficiency
  • Low Qg and Qsw for Better THD and Improved Efficiency

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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