IRFB42N20D

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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IRFB42N20D
IRFB42N20D

Product details

  • ID (@25°C) max
    44 A
  • Mounting
    THT
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    300 W
  • Qgd
    43 nC
  • QG (typ @10V)
    91 nC
  • RDS (on) (@10V) max
    55 mΩ
  • RthJC max
    0.5 K/W
  • Tj max
    175 °C
  • VDS max
    200 V
  • VGS(th)
    4.25 V
  • VGS max
    30 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design

Applications

Documents

Design resources

Developer community

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