not for new design
RoHS Compliant

IPL60R365P7

Optimized power MOSFETs merging high energy efficiency with ease-of-use
Data Sheet
package
ea.
in stock

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IPL60R365P7
IPL60R365P7
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.7
  • ID max
    10 A
  • ID (@25°C) max
    10 A
  • IDpuls max
    26 A
  • Mounting
    SMT
  • Operating Temperature
    -40 °C to 150 °C
  • Package
    Thin-PAK 8x8
  • Pin Count
    5 Pins
  • Polarity
    N
  • Ptot max
    46 W
  • Qgd
    4 nC
  • QG (typ @10V)
    13 nC
  • QG
    13 nC
  • RDS (on) max
    365 mΩ
  • RDS (on) (@10V) max
    365 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    2.73 K/W
  • Rth
    2.73 K/W
  • Special Features
    price/performance
  • VDS max
    600 V
  • VGS(th)
    3.5 V
OPN
IPL60R365P7AUMA1
Product Status not for new design
Infineon Package
PG-VSON-4
Package Name Thin-PAK 8x8
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 2a
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-VSON-4
Package Name Thin-PAK 8x8
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 2a
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Features

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G
  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency
  • Ease-of-use
  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Documents

Documents

Design resources

Partner solutions

Developer community

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