Active and preferred
RoHS Compliant
Lead-free

IDW40G120C5B

1200 V Silicon Carbide Schottky diode in TO-247-3 package
Data Sheet
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IDW40G120C5B
IDW40G120C5B
Data Sheet

Product details

  • I(FSM) max
    290 A
  • IF max
    40 A
  • IR
    23 µA
  • Package
    PG-TO247-3
  • Ptot max
    402 W
  • QC
    202 nC
  • Qualification
    Industrial
  • RthJC
    0.3 K/W
  • VF
    1.4 V
Recommended
OPN
IDW40G120C5BFKSA1 IDW40G120C5BXKSA1
Product Status active and preferred active and preferred
Infineon Package
PG-TO247-3
PG-TO247-3
Package Name TO247 TO247
Packing Size 240 240
Packing Type TUBE TUBE
Moisture Level NA N/A
Moisture Packing NON DRY NON DRY
Lead-free Yes Yes
Halogen Free No Yes
RoHS Compliant Yes Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level -
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temp. depend. of VF
  • Best-in-class surge current capab.
  • Excellent thermal performance

Documents

Documents

Design resources

Partner solutions

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