Active and preferred
RoHS Compliant
Lead-free

FM25L16B-DG

Data Sheet
package

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FM25L16B-DG
FM25L16B-DG
Data Sheet

Product details

  • Density
    16 kBit
  • Frequency
    20 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    2Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25L16B-DG
Product Status active and preferred
Infineon Package
PG-WSON-8
Package Name DFN-8 (001-85260)
Packing Size 1620
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-WSON-8
Package Name DFN-8 (001-85260)
Packing Size 1620
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The FM25L16B-DG is a 16-Kbit (2K × 8) serial ferroelectric RAM (F-RAM) with a high-speed SPI interface up to 20 MHz. It delivers 100 trillion read/write cycles endurance and 151-year data retention at 65°C, making it ideal for frequent nonvolatile writes. Operating from 2.7 V to 3.6 V over -40°C to +85°C, it features NoDelay™ writes, advanced write protection, and 3 μA standby current.

Features

  • 16-Kbit ferroelectric RAM, 2K x 8
  • 100 trillion (1e14) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ instant writes, no write delay
  • Up to 20 MHz SPI interface
  • Supports SPI mode 0 and mode 3
  • Hardware and software write protection
  • Block protection for 1/4, 1/2, or full array
  • Low power: 200 μA active, 3 μA standby
  • Operates from 2.7 V to 3.6 V supply
  • Industrial temp range: –40°C to +85°C
  • Input/output capacitance: 6/8 pF max

Benefits

  • Reliable nonvolatile memory for critical data
  • Eliminates write delays for fast operation
  • High endurance supports frequent data logging
  • 151-year retention prevents data loss
  • Drop-in replacement for serial EEPROM/flash
  • 20 MHz SPI enables high-speed access
  • Flexible protection guards against overwrites
  • Low power extends battery/device life
  • Wide voltage range suits many designs
  • Operates reliably in harsh environments
  • Simple integration with standard SPI
  • Small capacitance supports fast signal timing

Documents

Documents

Design resources

Partner solutions

Developer community

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