Active and preferred
RoHS Compliant
Lead-free

FM22LD16-55-BG

Data Sheet
package
ea.
in stock

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FM22LD16-55-BG
FM22LD16-55-BG
ea.
Data Sheet

Product details

  • Density
    4 MBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Operating Voltage (VCCQ) range
    2.7 V to 3.6 V
  • Organization (X x Y)
    256Kb x 16
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    55 ns
Recommended
OPN
FM22LD16-55-BG
Product Status active and preferred
Infineon Package
PG-TFBGA-48
Package Name FBGA-48 (001-91158)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TFBGA-48
Package Name FBGA-48 (001-91158)
Packing Size 480
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM22LD16-55-BG is a 4-Mbit (256K × 16) nonvolatile ferroelectric RAM (F-RAM) with 55 ns access time, designed as a drop-in replacement for SRAM. It supports up to 100 trillion read/write cycles and 151-year data retention at 65°C, operates from 2.7 V to 3.6 V across -40°C to +85°C. Features include NoDelay™ writes, page mode operation, software block write-protect, and low power consumption. The 48-ball FBGA package is ideal for industrial applications.

Features

  • 4-Mbit nonvolatile F-RAM, 256K × 16
  • High-endurance 100 trillion read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes for instant data storage
  • Page mode operation to 25 ns cycle time
  • SRAM compatible, industry-standard pinout
  • 55 ns access time, 110 ns cycle time
  • Software-programmable block write-protect
  • Active current 8 mA (typ), standby 90 μA
  • Low voltage operation: VDD = 2.7 V to 3.6 V
  • Low voltage monitor for data protection
  • Monolithic reliability, no battery required

Benefits

  • Data is instantly nonvolatile, no wait states
  • Endures frequent, unlimited write cycles
  • Reliable data retention for over a century
  • No battery maintenance or replacement needed
  • Drop-in replacement for standard SRAM
  • Fast access and cycle times boost performance
  • Page mode enables efficient burst transfers
  • Block write-protect prevents accidental
  • Low power reduces system energy use
  • Operates in low-voltage systems
  • Data protected during voltage drops
  • Robust against shock, vibration, moisture

Documents

Documents

Design resources

Partner solutions

Developer community

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