CY7C1620KV18-333BZXI
Active and preferred
RoHS Compliant

CY7C1620KV18-333BZXI

ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY7C1620KV18-333BZXI
CY7C1620KV18-333BZXI
ea.

Product details

  • Architecture
    DDR-II CIO
  • Bank Switching
    N
  • Burst Length (Words)
    2
  • Data Width
    x 36
  • Density
    144 MBit
  • ECC
    N
  • Family
    DDR-II CIO
  • Frequency
    333 MHz
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • On-Die Termination
    N
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.7 V to 1.9 V
  • Organization (X x Y)
    4Mb x 36
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Read Latency (Cycles)
    1.5
OPN
CY7C1620KV18-333BZXI
Product Status active and preferred
Infineon Package
Package Name FBGA-165 (51-85195)
Packing Size 105
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name FBGA-165 (51-85195)
Packing Size 105
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY7C1620KV18-333BZXI is a 144-Mbit DDR II synchronous pipelined SRAM in 4M × 36 organization. It supports 333 MHz clock with double data rate transfers (666 MHz data rate) and a two-word burst counter that reduces address bus frequency. The device uses 1.8 V core (VDD 1.7–1.9 V) with 1.4 V to VDD I/O supply, and is offered in a 165-ball FBGA, Pb-free, industrial -40°C to +85°C grade.

Features

  • 144-Mbit DDR II synchronous SRAM
  • 333 MHz clock; 666 MHz data rate
  • Two-word burst with 1-bit counter
  • 1.5-cycle latency with DOFF high
  • 1-cycle latency DDR I mode (DOFF)
  • Dual input clocks K/K for DDR
  • Output clocks C/C or single-clock
  • Echo clocks CQ/CQ for data capture
  • Programmable impedance via ZQ pin
  • RQ 175–350 Ω for ±15% match
  • PLL runs 120 MHz to fMAX
  • JTAG IEEE 1149.1 boundary scan

Benefits

  • High bandwidth for fast access
  • More throughput at lower fCLK
  • Less address toggling reduces EMI
  • Latency options ease integration
  • K/K clocks simplify DDR timing
  • C/C clocks help reduce skew
  • CQ/CQ eases high-speed capture
  • ZQ trim improves signal integrity
  • Trace match cuts reflections
  • PLL improves data placement timing
  • JTAG speeds board test and debug
  • Depth expand without added waits

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }