Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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CY62167DV30LL-55BVXIT
END OF LIFE
discontinued
RoHS Compliant
Lead-free

CY62167DV30LL-55BVXIT

END OF LIFE
Datasheet
package
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CY62167DV30LL-55BVXIT
CY62167DV30LL-55BVXIT
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Datasheet


Product details

  • Density
    16 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    1M x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    55 ns

OPN
CY62167DV30LL-55BVXIT
Product Status discontinued
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85178)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
CN
View replacement

Product Status discontinued
Infineon Package
PG-VFBGA-48
Package Name VFBGA-48 (51-85178)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
CN
View replacement
CY62167DV30LL-55BVXIT is a 16-Mbit (1 M × 16) CMOS static RAM for low-power embedded storage. It operates from 2.2 V to 3.6 V over -40°C to +85°C with 55 ns access time. Typical active current is 2 mA at 1 MHz. Automatic power-down plus standby when deselected cuts current to 2.5 µA typ (22 µA max) at VCC = 3.6 V. Supports BHE/BLE byte enables for 8-bit writes and reads.

Features

  • 16-Mbit SRAM (1 M × 16)
  • 2.2 V to 3.6 V VCC operation
  • Auto power-down on deselect
  • Standby mode via CE1/CE2
  • 2.5 µA typ ISB1/ISB2 standby
  • 2 mA typ ICC at 1 MHz
  • Data retention at VDR = 1.5 V
  • 10 µA max data retention current
  • Byte write via BHE/BLE enables
  • I/O high-Z via CE/OE/BHE/BLE
  • ESD > 2001 V (MIL-STD-883)
  • Latch-up current > 200 mA

Benefits

  • Integrates into 16-bit buses
  • Works with common 3.3 V rails
  • Cuts idle power when deselected
  • Flexible standby control options
  • µA standby reduces sleep drain
  • Low active current saves battery
  • Keeps data with 1.5 V backup
  • Low retention current saves energy
  • Byte writes reduce write traffic
  • High-Z outputs enable bus sharing
  • Improves robustness vs ESD hits
  • Avoids latch-up in fault events

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