Active and preferred
RoHS Compliant
Lead-free

CY15B201QSN-108SXE

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CY15B201QSN-108SXE
CY15B201QSN-108SXE

Product details

  • Density
    1 MBit
  • Family
    Excelon™
  • Frequency
    108 MHz
  • Interfaces
    QSPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage range
    1.8 V to 3.6 V
  • Organization (X x Y)
    128Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
OPN
CY15B201QSN-108SXE
Product Status active and preferred
Infineon Package
Package Name SOIC-8 (001-85261)
Packing Size 470
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name SOIC-8 (001-85261)
Packing Size 470
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15B201QSN is a 1-Mb (128K × 8) automotive-grade ferroelectric RAM (F-RAM) with instant non-volatile writes, virtually unlimited endurance of 10 trillion cycles, and 121-year data retention. It operates from 1.8 V to 3.6 V across –40°C to +125°C, supporting Quad SPI and DDR interfaces up to 108 MHz. Integrated ECC and CRC ensure robust data integrity. AEC-Q100 Grade 1 and RoHS compliance make it ideal for frequent, reliable automotive and industrial data storage.

Features

  • 1-Mb F-RAM, 128K × 8 organization
  • 10 trillion read/write cycle endurance
  • 121-year data retention
  • Quad, Dual, Extended, and Single SPI support
  • Up to 108 MHz SPI SDR, 54 MHz SPI DDR
  • XiP (eXecute in Place) read/write
  • Hardware and software write protection
  • Embedded ECC and CRC for data integrity
  • Unique device and serial number
  • 256-byte special sector memory
  • Low active, standby, and deep power-down
  • 1.8 V to 3.6 V supply voltage

Benefits

  • Eliminates frequent memory replacement
  • Reliable data storage for over a century
  • Fast, flexible SPI interface options
  • High-speed operation for demanding systems
  • Enables direct code execution from memory
  • Protects data from accidental writes
  • Detects and corrects memory errors
  • Simplifies device identification and tracking
  • Special sector survives reflow cycles
  • Minimizes power consumption in all modes
  • Operates in low-voltage applications

Applications

Documents

Design resources

Developer community

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