Please note that this is an end of life product. Explore the product family for available alternatives. Please note that this is an end of life product. Explore the product family for available alternatives.
View product family
CY14B104NA-ZS45XE
END OF LIFE
discontinued
RoHS Compliant

CY14B104NA-ZS45XE

END OF LIFE
Datasheet
package
View product family

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY14B104NA-ZS45XE
CY14B104NA-ZS45XE
View product family
Datasheet


Product details

  • Density
    4 MBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    256Kb x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    45 ns

OPN
CY14B104NA-ZS45XE
Product Status discontinued
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 135
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
View product family

Product Status discontinued
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 135
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
View product family
CY14B104NA-ZS45XE is a 4-Mbit (256K × 16) automotive parallel nvSRAM that combines fast SRAM with QuantumTrap nonvolatile storage. It operates from 3.0 V to 3.6 V over –40°C to +125°C, supports 45 ns access, and performs hands-off AutoStore on power-down using a 61 µF to 180 µF VCAP capacitor. It is available in a 44-pin TSOP II package; STORE/RECALL can be initiated by software or the HSB pin.

Features

  • 4-Mbit nvSRAM (256K × 16)
  • 16-bit bus with BHE/BLE bytes
  • 25 ns/45 ns asynchronous access
  • AutoStore on power-down via VCAP
  • STORE via HSB pin or software seq
  • RECALL on power-up or software seq
  • Parallel STORE/RECALL of all cells
  • VCAP capacitor 61–180 µF
  • HSB busy LOW during STORE/RECALL
  • SRAM R/W blocked during STORE/RECALL
  • Infinite SRAM read/write/RECALL
  • Up to 1,000K nonvolatile STORE ops

Benefits

  • SRAM speed with nonvolatile backup
  • AutoStore saves data at power loss
  • HSB/software control adds flexibility
  • Power-up RECALL restores state fast
  • Parallel store/recall cuts downtime
  • Byte enables reduce bus activity
  • Defined VCAP sizing eases design-in
  • HSB busy avoids data corruption
  • Blocks R/W during NVM updates
  • Infinite SRAM cycles avoid wear-out
  • High STORE endurance lowers service
  • Long retention keeps data after off

Applications

Documents

Design resources

Partner solutions

Developer community