Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant
Lead-free

BFP720FESD

END OF LIFE
Data Sheet
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BFP720FESD
BFP720FESD
Data Sheet

Product details

  • fT
    45 GHz
  • Gmax
    28.50 dB @900 MHz
  • IC max
    30 mA
  • NFmin
    0.55 dB @900 MHz
  • OIP3
    22 dBm
  • OP1dB
    7 dBm
  • Package
    TSFP-4
  • Ptot
    100 mW
  • VCEO max
    4.2 V
OPN
BFP720FESDH6327XTSA1
Product Status discontinued
Infineon Package
TSFP-4-1
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
TSFP-4-1
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BFP720FESD is Silicon Germanium Carbon (SiGe:C) NPN heterojunction wideband bipolar RF Transistor (HBT) with an integrated ESD protection

Features

  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV HBM ESD hardness.
  • High transition frequency fT = 45 GHz to enable best in class noise figure at high frequencies: NFmin = 0.8 dB at 5.5 GHz, 3V, 5 mA
  • High gain Gms =  22 dB at 5.5 GHz, 3V, 15 mA
  • OIP3 = 21 dBm at 5.5 GHz, 3V, 15 mA
  • Low profile and small form factor leadless package

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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