Automotive MOSFET
Wide range of power MOSFETs covering N-channel, P-channel, and Dual-channel MOSFETs for automotive applications qualified beyond AEC-Q101
By using high-quality components, such as automotive power MOSFETs from Infineon, engineers and automakers keep MOSFET-related failures to an absolute minimum. Our commitment to our customers’ success and to overall road safety is proven by the fact that all automotive MOSFETs bearing our name uphold the highest-possible quality standards, far beyond AEC-Q101.
The portfolio of Infineon’s automotive qualified OptiMOS™ power MOSFETs offers benchmark quality from 20V-300V, robust packages and RDS(on) down to 0.4 mΩ.
Infineon’s is currently introducing its next leading MOSFET generation called OptiMOS™ 7, which will be the new standard setting technology for tomorrows automotive applications. OptiMOS™ 7 will enable highest power efficiency, reduced switching losses, increased SOA for high current applications in combination with innovative & robust packages at smallest footprint.
We continuously offer the latest automotive MOSFET products with superior performance based on Infineon’s leading MOSFET technology, excellent quality, and robust package:
- Leading RDS(on) performance in trench technologies
- Highest current capabilities in standard packages
- Lowest switching and conduction power losses
- Robust package technology
Infineon automotive MOSFETs are used to drive motors in a wide range of applications such as pumps, fans, ventilation, seat adjustment, or sunroofs. They are also used in safety-critical applications such as electric power steering (EPS), electric braking, and injection systems. Furthermore, they act as switches in On board chargers, HV/LV DC/DC converters, battery management systems, and inverters.
The key takeaway: we have the right MOSFET in the suitable package for all automotive applications.
Take a look at the explanation of the product status below:
| Status | Definition |
| Active & preferred: | This product is in production and is with the latest product technology (best choice). |
| Active: | This product is in production, but please use a product with the latest product technology (active & preferred) for new designs. |
| Not for new design: | This product is in production, but it is strongly advised not to be used for new designs. Please use a product with the latest product technology (active & preferred) for new designs. |
| Discontinued: | PD released. Please use recommended replacement product named in the PD. |
| Coming soon: | This product is before start of production (SOP) and will be released for production (active & preferred) soon. |
| On request: | This product is available for new designs under special conditions. |
In combination with sensors, microcontrollers, and other required semiconductor solutions, Infineon offers a wide range of automotive MOSFETs that are developed with the expertise of several decades.
Our broad automotive MOSFET portfolio includes P-Channel MOSFETS and N-Channel MOSFETS in a variety of packages. Depending on you applications needs you can find single, dual Half-bridge and top-side-cooled packages for your requirements.
Infineon offers a wide portfolio of automotive P-Channel power MOSFET in leaded packages with the technology of OptiMOS™ -P2 and Gen5.
Our portfolio of automotive P-Channel MOSFETs offers products in 30V, 40V, 55V and 150V with the world’s lowest RDS(on) at 40 V and the highest current capabilities. Additionally, it is fully avalanche.
With a portfolio of Automotive N-Channel MOSFETs available in a wide variety of packages, our MOSFETs provide ultimate design flexibility and meet a wide selection of needs. Starting from 3mm x 3mm and going up to a size of 10mm x 15mm, you can find the MOSFET for your application needs.
Additionally, the newly released Half-bridge package for 40V motor drive applications, along with the newest top-side-cooled 10mm x 15mm for highest power density applications, complete the portfolio for these special requirements saving space and additional costs on cooling components respectively.
Silicon Carbide (SiC) MOSFETs offer high efficiency and reliability for automotive applications. Infineon’s extensive range of automotive SiC MOSFETs, include Silicon Carbide CoolSiC™ MOSFETS, Silicon Carbide MOSFET Discretes, and Silicon Carbide CoolSiC™ MOSFET Modules.
These SiC MOSFETs for the automotive industry provide optimal performance and the highest operational reliability as well as improved savings in both space and weight categories.
When it comes to automotive applications, a MOSFET is used in body electronics, powertrain, chassis and safety, car security, electric drive drain, and infotainment systems.
To learn more about all our automotive solutions by application, visit our automotive applications page.
The dual SSO8 5x6 mm2 package is perfectly suitable for single loads. For bridge applications the routing with a dual MOSFET is complicated and requires a large PCB area. Additionally, current rating in the dual SSO8 packages are limited to 20A.
Using the integrated half-bridge, the PCB area is sizably reduced, as it provides enhanced routing for bridge applications. The newly designed half-bridge is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A.
Potential applications: Motor control, window lift, BCM (Body Control Module), Parking brake, Seat control module
Product key features:
- Integrated half bridge SSO8 (5x6)
- 5x6 mm2 reduced footprint & optimized layout for B6 apps
- Latest OptiMOS™6 40V optimized for switching & power losses
- Package JEDEC listed
- Cost efficiency for low & mid power drive apps
- Cu-clip soldered
- Enhanced routing for bridge applications results in sizably PCB area
- RDS(ON) range 3.0 mΩ to 7.0 mΩ
- Increased datasheet current rating of 60A
| Product |
max RDS(on) [mΩ] |
ID [A] |
Qg (typ) [nC] |
LL/NL |
| 3.0 |
60 |
27 |
LL |
|
| 3.1 |
60 |
24 |
NL |
|
| 4.5 |
60 |
15 |
LL |
|
| 5.0 |
60 |
12.5 |
NL |
|
| 6.3 |
45 |
10 |
LL |
|
| 7.0 |
45 |
8.9 |
NL |
Infineon introduces sTOLL as its latest high power leadless package in 7x8 mm² with OptiMOS™ 5 40 V, 80V, and 100 V and OptiMOS™ 7 40 V for future automotive applications (JEDEC name is MO-319 and IEC name is HSOF-5).
Knowing exactly what carmakers and consumers need and expect, today and tomorrow, Infineon automotive MOSFETs go beyond the AEC-Q101 qualification standard. While the standard is valuable in its own right, it’s not enough for us.
The reason for our choice becomes clear by examining AEC-Q101’s weaknesses. For one, the standard neither covers untypical or stringent mission profiles nor does it track the stability of the manufacturing process over time. What is more, it does not consider dpm below 10,000. In comparison, our automotive MOSFETs are more robust and achieve the lowest-possible dpm rate of less than 0.1.
Why do we at Infineon exceed AEC-Q101? Because upholding high quality standards is a mindset that permeates our entire organization, even when this means going above and beyond. In this case, exceeding the standards is required to make cars that are cleaner, thanks to lower CO2 emissions, and safer, thanks to (semi-)autonomous driving features. Our ridged product qualification process ensures automakers receive the most reliable performance possible.
By combining leading technologies with robust packaging, our MOSFETs ensure best-in-class performance in a range of automotive applications. But that’s not all. You and your customers also enjoy the following benefits:
Infineon supports the design process by offering:
- Evaluation Boards
- PCB Design Data
- Simulation Models
- Simulation Tools
You can also ask the Infineon community in the Infineon MOSFET Forum for further support. Click here to go directly to the forum.
- Infineon provides a wide range of automotive MOSFETs designed to best meet your system requirements for electric two-wheelers.
- These MOSFETs are the key to unlocking sustainable mobility and advancing cleaner transportation solutions!
- Infineon’s Dual Gate MOSFET (IAUTN08S5N012L) is an 80 V product with an RDS of 1.15 milliohms, making it an ideal choice for use in disconnect switches
- Learn more about this product and its use in power distribution applications in this training
- Be familiar with Infineon’s measures to reduce the failure rate and to prove the quality level of a product
- Identify the right product based on given target application requirements
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
- Know the different 48 V applications for the new drivetrain architectures.
- Get an overview of Infineon`s comprehensive MOSFET portfolio.
- Have an overview of the converters needed in electric vehicles.
- Analyze the 2-quadrant converter topology in buck and boost mode and the half-bridge converter with center tap rectification topology.
- Recognize the different types of setups in the data sheets.
- Be able to calculate the junction-to-ambient thermal resistance value, the power losses, and the static DC current.
