Infineon’s new Automotive SSO8 HB 5x6 offers two N-channel MOSFETs in H-bridge configuration at up to 100 A current capability.

OptiMOS™-7 40 V in SSO8 HB 5x6 offers the highest power density and energy efficiency at the lowest costs per channel.

Furthermore, SSO8 HB 5x6 in OptiMOS™-7 40 V offers reduced switching losses, improved SOA ruggedness and high avalanche current capability to facilitate efficient system designs for tomorrow’s Automotive applications.

IAUCN04S7L025AH is designed as asymmetric H-bridge for Automotive USB-charging applications.

The product family of OptiMOS™-7 40 V in the SSO8 HB 5x6 package ranges from best-in-class 2.3 mΩ to 5.4 mΩ per MOSFET channel.

For more information, please check our product presentation and product brief for Automotive MOSFET OptiMOS™-7 40 V SSO8 HB:

  • 5x6 mm² H-bridge footprint
  • 100 A high current capability
  • 2-channel H-bridge configuration
  • Leading-edge OptiMOS™-7 40V
  • RDS(on) range: 2.3 mΩ – 5.4 mΩ
  • Cu-clip for low RDS(on) & low inductance
  • High avalanche capability
  • SOA ruggedness
  • High power & current density in H-bridge
  • Optimized layout & form factor
  • High thermal capacity lead-frame
  • Reduced conduction losses
  • Optimized switching behavior
  • JEDEC industry std. package
  • Automotive robust package & Infineon quality
  • Body control modules
  • Window-lift
  • Power-lift gate
  • Power-seat
  • Electric parking brake
  • Small BLDC drives
  • USB-charging / DC-DC
  • Water/ oil / fuel pump
SSO8 HB 5x6 footprint
SSO8 HB 5x6 footprint
SSO8 HB 5x6 footprint
  • Body length:                 5.48 mm
  • Body width:                   5.15 mm
  • Min. terminal pitch:    1.27 mm

For detailed information on the SSO8 HB 5x6 footprint dimensions, please click on the respective package (PG-TDSON-8-56PG-TDSON-8-57).