AF Schottky diodes

Schottky diodes

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Overview

Infineon's silicon low-barrier Schottky diodes

Key Features

  • Low forward voltage drop
  • Low leakage current
  • Low power consumption
  • High reverse voltage [maximum 70 V]
  • High forward current [maximum 3 A]

Products

About

Infineon Schottky diodes are silicon low-barrier N-type devices. Low forward voltage drop and high forward current handling [up to 3 A] make them ideal for usage in reverse polarity protection as well as in clipping and clamping circuits.

AF Schottky diodes are offered in various leadless and leaded packages and are available in various junction diode configurations [single, series, common anode, common cathode, and parallel pair].

Infineon offers simulation models for Schottky diodes to support customers in the design process. SPICE models and S-parameter measurements are provided for simulations. PCB footprints and symbols are also provided to support customers in the layout process. PCB design data is provided for major layout software such as MWO and ADS.

Infineon Schottky diodes are silicon low-barrier N-type devices. Low forward voltage drop and high forward current handling [up to 3 A] make them ideal for usage in reverse polarity protection as well as in clipping and clamping circuits.

AF Schottky diodes are offered in various leadless and leaded packages and are available in various junction diode configurations [single, series, common anode, common cathode, and parallel pair].

Infineon offers simulation models for Schottky diodes to support customers in the design process. SPICE models and S-parameter measurements are provided for simulations. PCB footprints and symbols are also provided to support customers in the layout process. PCB design data is provided for major layout software such as MWO and ADS.

Documents

Design resources

Developer community

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