Active and preferred
RoHS Compliant
Lead-free

S70FL01GSAGMFA013

Data Sheet
package
software

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S70FL01GSAGMFA013
S70FL01GSAGMFA013
Data Sheet

Product details

  • Classification
    ISO 26262-ready
  • Density
    1 GBit
  • Family
    FL-S
  • Interface Bandwidth
    52 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive
Recommended
OPN
S70FL01GSAGMFA013
Product Status active and preferred
Infineon Package
PG-DSO-16
Package Name SOIC-16 (002-15547)
Packing Size 1450
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-16
Package Name SOIC-16 (002-15547)
Packing Size 1450
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S70FL01GSAGMFA013 is a 1 Gbit stacked SPI Flash memory with dual S25FL512S die for automotive and industrial storage. Operating at 3.0 V core voltage and up to 133 MHz clock speed, it features uniform 256-kB sectors, 100,000 program-erase cycles, and 20-year data retention. AEC-Q100 Grade 1 qualification ensures reliability. Each die is managed independently. Available in lead-free SOIC and BGA packages, it supports temperatures up to 125°C.

Features

  • Dual-die stack architecture
  • SPI Multi-I/O interface
  • Supports DDR and SDR modes
  • 32-bit extended addressing
  • Page programming buffer: 512 bytes
  • Uniform 256 KB sectors
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • One Time Program (OTP) 2048 bytes
  • Block protection with advanced sector
  • Core voltage: 2.7 V to 3.6 V
  • I/O voltage: 1.65 V to 3.6 V

Benefits

  • Enables 1 Gbit high-density storage
  • Flexible interface for various controllers
  • High-speed data transfer with DDR
  • Large address space for big data
  • Fast programming for efficient updates
  • Simplifies memory management
  • Reliable for frequent rewriting
  • Long-term data reliability
  • Secure storage for sensitive data
  • Prevents accidental data changes
  • Compatible with 3 V systems
  • Flexible I/O for system integration

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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