Active and preferred
RoHS Compliant
Lead-free

S29GL01GT11DHAV23

Data Sheet
package
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S29GL01GT11DHAV23
S29GL01GT11DHAV23
Data Sheet

Product details

  • Density
    1 GBit
  • Family
    GL-T
  • Initial Access Time
    110 ns
  • Interface Frequency (SDR/DDR) (MHz)
    -
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Page Access Time
    25 ns
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive
Recommended
OPN
S29GL01GT11DHAV23
Product Status active and preferred
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-15537)
Packing Size 2200
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-LFBGA-64
Package Name FBGA-64 (002-15537)
Packing Size 2200
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S29GL01GT11DHAV23 is a 1 Gb (128 MB) parallel NOR flash memory based on 45-nm MIRRORBIT™ technology, with page access times as low as 15 ns and random access down to 100 ns. Operating from a single 2.7 V to 3.6 V supply and supporting ×8/×16 data bus, it features a 512-byte programming buffer, internal ECC, and 100,000 program/erase cycles per sector. AEC-Q100 qualification and support for up to 105°C suit automotive, industrial, and networking applications.

Features

  • 45-nm MIRRORBIT™ technology
  • Single supply for read/program/erase
  • Versatile I/O voltage (1.65 V to VCC)
  • ×8/×16 data bus
  • 512-byte programming buffer
  • Hardware ECC with single bit correction
  • Uniform 128-KB sectors
  • Advanced sector protection (ASP)
  • 100,000 program/erase cycles per sector
  • 20-year data retention (typical)
  • Power-up and low VCC write inhibit
  • Status Register, Data Polling, Ready/Busy pin

Benefits

  • High density for embedded applications
  • Flexible I/O supports various host systems
  • Fast programming with 512-byte buffer
  • Reliable data with built-in ECC
  • Simplifies memory management with uniform
  • Enhanced data security with ASP
  • Long device lifetime, 100K cycles per sector
  • Retains data up to 20 years
  • Prevents accidental writes during power
  • Easy status monitoring and diagnostics

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }