Active and preferred

S29GL01GS10FAI010

ea.
in stock

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S29GL01GS10FAI010
S29GL01GS10FAI010
ea.

Product details

  • Density
    1 GBit
  • Family
    GL-S
  • Initial Access Time
    100 ns
  • Interface Frequency (SDR/DDR) (MHz)
    NA
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Pb
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Page Access Time
    15 ns
  • Peak Reflow Temp
    220 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
OPN
S29GL01GS10FAI010
Product Status active and preferred
Infineon Package
Package Name FBGA-64 (002-15536)
Packing Size 180
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant No
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name FBGA-64 (002-15536)
Packing Size 180
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S29GL01GS10FAI010 is a 1 Gb parallel NOR flash memory using 65 nm MIRRORBIT™ Eclipse technology, with a 3.0 V core, versatile I/O (1.65 V to VCC), and 16-bit data bus. It supports asynchronous page mode reads with 15 ns page access, 100 ns random access, 512-byte write buffer, 128 kB uniform sector erase, and internal ECC for single-bit error correction. Rated for -40°C to +85°C (AEC-Q100 Grade 3), it is ideal for automotive and industrial applications.

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Benefits

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }