Active and preferred
RoHS Compliant
Lead-free

S25FS256SAGNFI003

ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S25FS256SAGNFI003
S25FS256SAGNFI003
ea.

Product details

  • Density
    256 MBit
  • Family
    FS-S
  • Interface Bandwidth
    66 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
OPN
S25FS256SAGNFI003
Product Status active and preferred
Infineon Package
Package Name DFN-8 (002-15552)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name DFN-8 (002-15552)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S25FS256SAGNFI003 is a 256 Mbit (32 MB) serial NOR flash memory with a 1.7 V to 2.0 V supply, built on 65 nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. Supporting SPI Multi-I/O, it achieves up to 80 MBps read speeds with SDR at 133 MHz and DDR at 80 MHz. Features include hybrid and uniform sector options, a 512-byte programming buffer, advanced sector protection, and a 1024-byte OTP area.

Features

  • SPI interface with multi I/O support
  • DDR and QPI read modes
  • 256- or 512-byte page programming buffer
  • Internal ECC with single-bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • 1.7 V to 2.0 V supply voltage
  • Operating temperature up to +125°C
  • Serial flash discoverable parameters (SFDP)
  • Advanced sector and block protection
  • 65-nm MIRRORBIT™ technology

Benefits

  • Flexible interface for various host systems
  • Fast data access with DDR and QPI modes
  • Efficient large or small page programming
  • Reliable data with built-in ECC
  • Versatile erase for different applications
  • High endurance for frequent updates
  • Long-term data storage reliability
  • Low voltage for energy-efficient designs
  • Robust operation in harsh environments
  • Easy configuration and compatibility
  • Enhanced security for sensitive data
  • Advanced process for high density/low cost

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }