Active and preferred
RoHS Compliant
Lead-free

S25FL512SAGBHAC10

Data Sheet
package
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S25FL512SAGBHAC10
S25FL512SAGBHAC10
Data Sheet

Product details

  • Classification
    ISO 26262-ready
  • Density
    512 MBit
  • Family
    FL-S
  • Interface Bandwidth
    52 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive
Recommended
OPN
S25FL512SAGBHAC10
Product Status active and preferred
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15534)
Packing Size 3380
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TFBGA-24
Package Name FBGA-24 (002-15534)
Packing Size 3380
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S25FL512SAGBHAC10 is a 512 Mb (64 MB) flash memory device with Infineon MIRRORBIT™ technology and Eclipse™ architecture. It operates at 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O voltage, supporting SPI Multi-I/O with Single, Dual, Quad, and DDR modes for up to 80 MBps read rates. Uniform 256 KB sectors, 100,000 program-erase cycles minimum, and 20-year data retention ensure reliability.

Features

  • CMOS 3.0 V core with versatile I/O
  • SPI with multi I/O and DDR option
  • 32-bit extended addressing
  • Normal, Fast, Dual, Quad, DDR read
  • 512-byte page programming buffer
  • Automatic ECC with single bit correction
  • Uniform 256-KB sectors
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP secure region
  • Block and advanced sector protection
  • Core VCC: 2.7 V to 3.6 V, VIO: 1.65 V to

Benefits

  • Flexible 3.0 V operation simplifies design
  • High-speed SPI enables fast data access
  • Large address space supports big systems
  • Multiple read modes optimize performance
  • Fast programming boosts throughput
  • ECC ensures reliable data storage
  • Uniform sectors simplify erase operations
  • High endurance lowers maintenance cost
  • Long retention secures data for years
  • OTP region enhances system security
  • Robust protection prevents data loss
  • Wide voltage range fits varied platforms

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }