IRHYS67230CMSCS

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IRHYS67230CMSCS
IRHYS67230CMSCS

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    10 A
  • ID (@25°C) max
    16 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-257AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    42 nC
  • QPL Part Number
    2N7592T3
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    130 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS min
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHYS67230CMSCS N-channel MOSFET is a radiation-hardened power MOSFET with a maximum voltage of 200V and a current capacity of 16A. With a low RDS(on) and low gate charge, this MOSFET is ideal for use in switching applications such as DC-DC converters and motor control. This QIRL device uses IR HiRel R6 technology with proven performance and reliability in satellite applications.

Applications

Documents

Design resources

Developer community

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