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IRHNS7460SESCS

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IRHNS7460SESCS
IRHNS7460SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R4
  • ID (@100°C) max
    12 A
  • ID (@25°C) max
    20 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    SupIR-SMD
  • Polarity
    N
  • QG
    220 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    320 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    500 V
  • VF max
    1.8 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
This R4 N-channel MOSFET in a SupIR-SMD package is a rad hard, 500V, 12A device for space applications. Its IR HiRel rad hard HEXFET technology provides high performance and reliability in satellite applications, with low RDS(on) and low gate charge for reduced power losses. Characterized for both Total Dose and Single Event Effects (SEE), this QIRL device offers electrical performance up to 100krad(Si) TID.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }