Active and preferred

IRHNME597110

Rad hard, 100 V, -3.1 A, rad hard MOSFET in SMD-0.2e Ceramic Lid package – 100 krad TID, COTS
Data Sheet

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRHNME597110
IRHNME597110
Data Sheet

Product details

  • Die Size
    1
  • ESD Class
    Class 1A
  • Generation
    R9
  • ID (@25°C) max
    -3.1 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2e
  • Polarity
    P
  • QG
    11 nC
  • Qualification
    COTS
  • RDS (on) (25C) max
    1.2 Ω
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    -5 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNME597110 is a R9 generation, rad hard, single P-channel MOSFET in a SMD-0.2e package with a ceramic lid that can handle 100 V and -3.1 A. It is optimal for space applications as its combination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converter or motor drives. This device retains all of the well established advantages of MOSFETs such as voltage control and fast switching.

Features

  • SEE hardened up to LET = 90 MeV.cm2/mg
  • Low RDS(on)
  • Low total gate charge
  • Fast switching
  • Hermetically sealed ceramic package
  • Surface mount
  • Light weight
  • ESD rating: class 1A (MIL-STD-750, 1020)

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }