IRHNME597110
Active and preferred

IRHNME597110

Rad hard, 100 V, -3.1 A, rad hard MOSFET in SMD-0.2e Ceramic Lid package – 100 krad TID, COTS
Datasheet

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IRHNME597110
IRHNME597110
Datasheet


Product details

  • Die Size
    1
  • ESD Class
    Class 1A
  • Generation
    R9
  • ID (@25°C) max
    -3.1 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2e
  • Polarity
    P
  • QG
    11 nC
  • QPL Part Number
    2N7506U8CE
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    1.2 Ω
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    -5 V

Recommended
OPN
Product Status active and preferred
Infineon Package C-CCN-3
Package Name SMD-0.2E CLID
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free Yes
RoHS Compliant No

Product Status
Active
Infineon Package C-CCN-3
Package Name SMD-0.2E CLID
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHNME597110 is a R9 generation, rad hard, single P-channel MOSFET in a SMD-0.2e package with a ceramic lid that can handle 100 V and -3.1 A. It is optimal for space applications as its combination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converter or motor drives. This device retains all of the well established advantages of MOSFETs such as voltage control and fast switching.

Features

  • SEE hardened up to LET = 90 MeV.cm2/mg
  • Low RDS(on)
  • Low total gate charge
  • Fast switching
  • Hermetically sealed ceramic package
  • Surface mount
  • Light weight
  • ESD rating: class 1A (MIL-STD-750, 1020)
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